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dc.contributor.authorThorkildsen, Gunnar
dc.date.accessioned2023-09-04T11:06:27Z
dc.date.available2023-09-04T11:06:27Z
dc.date.created2023-08-30T09:31:02Z
dc.date.issued2023
dc.identifier.citationThorkildsen, G. (2023) New benchmarks in the modelling of X-ray atomic form factors. Acta Crystallographica Section A: Foundations and Advances, A79 318-330.en_US
dc.identifier.issn2053-2733
dc.identifier.urihttps://hdl.handle.net/11250/3087290
dc.description.abstractAnalytical representations of X-ray atomic form factor data have been determined. The original data, f0(s;Z), are reproduced to a high degree of accuracy. The mean absolute errors calculated for all s = sin θ/λ and Z values in question are primarily determined by the precision of the published data. The inverse Mott–Bethe formula is the underlying basis with the electron scattering factor expressed by an expansion in Gaussian basis functions. The number of Gaussians depends upon the element and the data and is in the range 6–20. The refinement procedure, conducted to obtain the parameters of the models, is carried out for seven different form factor tables published in the span Cromer & Mann [(1968), Acta Cryst. A24, 321–324] to Olukayode et al. [(2023), Acta Cryst. A79, 59–79]. The s ranges are finite, the most common span being [0.0, 6.0] Å−1. Only one function for each element is needed to model the full range. This presentation to a large extent makes use of a detailed graphical account of the results.en_US
dc.language.isoengen_US
dc.publisherJohn Wiley & Sons Ltd.en_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.subjectfysikken_US
dc.subjectinverse Mott–Bethe formulaen_US
dc.subjectatomic form factorsen_US
dc.subjectanalytical representationsen_US
dc.titleNew benchmarks in the modelling of X-ray atomic form factorsen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersionen_US
dc.subject.nsiVDP::Matematikk og Naturvitenskap: 400::Fysikk: 430en_US
dc.source.pagenumber318-330en_US
dc.source.volumeA79en_US
dc.source.journalActa Crystallographica Section A: Foundations and Advancesen_US
dc.identifier.doi10.1107/S2053273323003996
dc.identifier.cristin2170743
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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