Effect of annealing on the electrical resistivity of Kondo lattice CeRh2Ga2
Peer reviewed, Journal article
Published version
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https://hdl.handle.net/11250/3133868Utgivelsesdato
2024-04Metadata
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Originalversjon
Anand, V. K., Adroja, D. T., Bhattacharyya, A., & Lake, B. (2024). Effect of annealing on the electrical resistivity of Kondo lattice CeRh2Ga2. Physica Scripta, 99(5), 055977. 10.1088/1402-4896/ad3e40Sammendrag
CeRh2Ga2, which crystallizes in CaBe2Ge2-type primitive tetragonal structure (space group P4/nmm), is known to exhibit Kondo lattice heavy fermion behavior and is proposed to be a potential candidate for Weyl-Kondo semimetal phase. Here we examine the effect of annealing, particularly on the electrical resistivity of polycrystalline CeRh2Ga2. A comparative study of the powder x-ray diffraction (XRD), magnetic susceptibility χ(T), heat capacity Cp(T) and electrical resistivity ρ(T) data of both as-arc-melted and annealed CeRh2Ga2 samples are presented. The XRD patterns of both as-arc-melted and annealed samples look similar. No marked effect of annealing could be clearly seen in the temperature dependences of χ and Cp data. However, the effect of annealing is clearly manifested in the T dependence of ρ, particlularly at low temperatures. At low-T the ρ(T) data of as-arc-melted CeRh2Ga2 follow a T2 temperature dependence (Fermi-liquid feature), whereas the ρ(T) data of annealed CeRh2Ga2 exhibit an upturn (semimetal-like feature).